型号 功能描述 生产厂家 企业 LOGO 操作

N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.36Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

STMICROELECTRONICS

意法半导体

STH15NB50F产品属性

  • 类型

    描述

  • 型号

    STH15NB50F

  • 功能描述

    MOSFET N-CH500V 10.5A ISOWATT218

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    PowerMESH™

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-12-15 17:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
2223+
TO3P
26800
只做原装正品假一赔十为客户做到零风险
ST
24+
TO-3P
2500
原装现货热卖
ST
26+
TO-4PF
60000
只有原装 可配单
ST
25+
TO-3PF
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ST
23+
TO-3PF
5000
专做原装正品,假一罚百!
ST
专业铁帽
1
原装铁帽专营,代理渠道量大可订货
ST/意法
2023+
TO3P
8635
全新原装正品,优势价格
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
ST
23+
TO-3PF
16900
正规渠道,只有原装!
ST
24+
6820

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