位置：首页 > IC中文资料第9090页 > H15NB50FI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H15NB50FI | N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 |   | |
H15NB50FI | N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET | STMICROELECTRONICS 意法半导体 | | |
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | |
H15NB50FI产品属性
- 类型
描述
- 型号
H15NB50FI
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JST |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
JST |
22+ |
NA |
2800 |
仓库现货,终端可送样品 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
56 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
JST |
2019+ |
2800 |
只做原装，可提供样品 |
||||
JST/日压 |
24+ |
塑壳 |
5000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
JST |
23+ |
NA |
70000 |
正规渠道,只有原装! |
|||
ST |
25+ |
TO-3PF |
18000 |
原厂直接发货进口原装 |
|||
ST |
26+ |
TO-3P |
60000 |
只有原装 可配单 |
|||
JST |
18+ |
9800 |
代理进口原装/实单价格可谈 |
||||
JST |
25+ |
N/A |
200000 |
专注连接器,连接一切可能 |
H15NB50FI芯片相关品牌
H15NB50FI规格书下载地址
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2019-1-28
DdatasheetPDF页码索引
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