位置：首页 > IC中文资料第9090页 > H15NB50FI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H15NB50FI | N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 |   | |
H15NB50FI | N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET | STMICROELECTRONICS 意法半导体 | | |
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | |
H15NB50FI产品属性
- 类型
描述
- 型号
H15NB50FI
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HRS |
25+ |
500 |
全新原装正品鄙视假货15118075546 |
||||
JST |
22+ |
NA |
25000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
JST/日压 |
24+ |
塑壳 |
5000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
INFINEON英飞凌 |
23+ |
TO-3P |
39130 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
JST |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
26+ |
TO-3P |
60000 |
只有原装 可配单 |
|||
JST |
23+ |
NA |
70000 |
正规渠道,只有原装! |
|||
JST/日压 |
2508+ |
/ |
273494 |
一级代理，原装现货 |
|||
ST |
26+ |
TO-3PF |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
JST |
2407+ |
30098 |
全新原装!仓库现货,大胆开价! |
H15NB50FI规格书下载地址
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2019-1-28
DdatasheetPDF页码索引
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