位置：首页 > IC中文资料第9090页 > H15NB50FI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
H15NB50FI | N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 |   | |
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex | STMICROELECTRONICS 意法半导体 | |
H15NB50FI产品属性
- 类型
描述
- 型号
H15NB50FI
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JST/日压 |
24+ |
塑壳 |
5000 |
原装，正品 |
|||
JST |
22+ |
NA |
25000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
INFINEON/英飞凌 |
23+ |
TO-3PL |
54968 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
JST |
23+ |
NA |
70000 |
正规渠道,只有原装! |
|||
JST/日压 |
2508+ |
/ |
273494 |
一级代理，原装现货 |
|||
JST |
2407+ |
30098 |
全新原装!仓库现货,大胆开价! |
||||
JST/日压 |
22+ |
连接器 |
728922 |
代理-优势-原装-正品-现货*期货 |
|||
ST |
2511 |
TO-3P |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
JST |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
JST |
22+ |
NA |
2800 |
仓库现货,终端可送样品 |
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2019-1-28
DdatasheetPDF页码索引
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