N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H2PAK-2 package

Features • 100 avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal ca

Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) H2PAK T/R

N-Ch 100V Fast Switching MOSFETs

Features  Advanced Trench MOS Technology  100 EAS Guaranteed  Super Low RDS(ON)  Green Device Available Applications  MOTOR Driver.  BMS.  High frequency switching and synchronous rectification.

N-Ch 100V Fast Switching MOSFETs

Features Advanced Trench MOS Technology  100 EAS Guaranteed  Super Low RDS(ON)  Green Device Available Applications  MOTOR Driver.  BMS.  High frequency switching and synchronous rectification.

N-Ch 100V Fast Switching MOSFETs

Features Advanced Trench MOS Technology  100 EAS Guaranteed  Super Low RDS(ON)  Green Device Available Applications  MOTOR Driver.  BMS.  High frequency switching and synchronous rectification.

N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package

Features • 100 avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 110A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.9mΩ(Max)@ VGS= 10V DESCRIPTION · Switching Applications