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STH15810-2中文资料
STH15810-2数据手册规格书PDF详情
Features
• 100 avalanche tested
• Ultra low on-resistance
Applications
• Switching applications
Description
This N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate
resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
更新时间：2026-1-28 11:26:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMICROELECTRONICS |
21+ |
标准封装 |
250 |
保证原装正品,需要联系张小姐 13544103396 微信同号 |
|||
ST/意法 |
25+ |
H2PAK |
32000 |
ST/意法全新特价STH15810-2即刻询购立享优惠#长期有货 |
|||
ST原装正品现货 |
2020+ |
TO-263 |
37500 |
原装正品现货,诚信经营。 |
|||
TI |
25+ |
5000 |
原装正品!!!优势库存!0755-83210901 |
||||
ST/意法半导体 |
21+ |
TO-263 |
1000 |
十年信誉,只做原装,有挂就有现货! |
|||
ST |
21+ |
TO-252 |
10000 |
勤思达只做原装 现货库存 支持支持实单 |
|||
ST/意法 |
22+ |
TO-263 |
3000 |
支持任何机构检测 只做原装正品 |
|||
ST |
2320+ |
H2PAK-2 |
5000 |
只做原装,特价清货! |
|||
ST/意法 |
2021+ |
TO-263 |
9000 |
原装现货,随时欢迎询价 |
|||
ST/意法 |
16+18+ |
TO-263 |
194 |
只做原装正品 |
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