位置：首页 > IC中文资料第10087页 > STH12N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STH12N60 | fast power mos transistor DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 |   | |
STH12N60 | fast power mos transistor | STMICROELECTRONICS 意法半导体 | | |
12 Amps, 600/650 Volts N-CHANNEL MOSFET The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p | UTC 友顺 | | ||
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：358.2 Kbytes Page：7 Pages | UTC 友顺 | | ||
12A 600V N-channel Enhancement Mode Power MOSFET 文件：897.58 Kbytes Page：11 Pages | WXDH 东海半导体 | | ||
12A 600V N-channel Enhancement Mode Power MOSFET 文件：898.09 Kbytes Page：11 Pages | WXDH 东海半导体 | | ||
12A 600V N-channel Enhancement Mode Power MOSFET 文件：897.54 Kbytes Page：11 Pages | WXDH 东海半导体 | |
STH12N60产品属性
- 类型
描述
- 型号
STH12N60
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 12A I(D) | TO-218
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ST/意法 |
23+ |
TO-3P |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
23+ |
TO-3PF |
5000 |
专做原装正品,假一罚百! |
|||
24+ |
N/A |
3560 |
|||||
ST |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST |
24+ |
TO-3P |
2500 |
原装现货热卖 |
|||
ST |
22+ |
3P |
6000 |
十年配单,只做原装 |
|||
ST |
NEW |
TO-247 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
24+ |
TO-3P |
6430 |
原装现货/欢迎来电咨询 |
|||
ST |
06+ |
TO-247 |
2000 |
原装 |
STH12N60规格书下载地址
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DdatasheetPDF页码索引
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