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STGWT38IH130D价格
参考价格：￥15.1351
型号：STGWT38IH130D 品牌：STMicroelectronics 备注：这里有STGWT38IH130D多少钱，2025年最近7天走势，今日出价，今日竞价，STGWT38IH130D批发/采购报价，STGWT38IH130D行情走势销售排行榜，STGWT38IH130D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STGWT38IH130D | 33 A - 1300 V - very fast IGBT Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features ■ Low saturation v | STMICROELECTRONICS 意法半导体 |   | |
STGWT38IH130D | 封装/外壳：TO-3P-3 整包 包装：管件 描述：IGBT 1300V 63A 250W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | STMICROELECTRONICS 意法半导体 | | |
STGWT38IH130D | IGBT 1300V 63A 250W TO3P | STMICROELECTRONICS 意法半导体 | | |
33 A - 1300 V - very fast IGBT Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features ■ Low saturation v | STMICROELECTRONICS 意法半导体 | | ||
33 A - 1300 V - very fast IGBT Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features ■ Low saturation v | STMICROELECTRONICS 意法半导体 | | ||
33 A - 1300 V - very fast IGBT Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. Features ■ Low saturation v | STMICROELECTRONICS 意法半导体 | |
STGWT38IH130D产品属性
- 类型
描述
- 型号
STGWT38IH130D
- 功能描述
IGBT 晶体管 33A 1300V VF IGBT PowerMESH IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
201 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
2023+ |
TO-247 |
6895 |
原厂全新正品旗舰店优势现货 |
|||
ST全系列 |
25+23+ |
TO-247 |
26604 |
绝对原装正品全新进口深圳现货 |
|||
STM |
2450+ |
TO-247 |
6885 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST |
23+ |
TO-3P |
16900 |
正规渠道,只有原装! |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
18+ |
TO-3P |
85600 |
保证进口原装可开17%增值税发票 |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
STM |
12+ |
TO-247 |
450 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
STM |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
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STGWT38IH130D规格书下载地址
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DdatasheetPDF页码索引
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