600 V, 20 A high speed trench gate field-stop IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：IGBT 600V 40A 167W TO3PF 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600 V, 20 A high speed trench gate field-stop IGBT

60 V field-effect rectifier diode

Features  ST advanced rectifier process  Stable leakage current over reverse voltage  Reduced leakage current  Low forward voltage drop  High frequency operation Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given si

Fast Recovery Diode

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20A SCHOTTKY RECTIFIER

文件：371.27 Kbytes Page：6 Pages

Dual Schottky Barrier Rectifier

文件：85.94 Kbytes Page：3 Pages

Dual Common-Cathode Schottky Rectifier

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