STGW60V60DF价格

参考价格:¥15.1434

型号:STGW60V60DF 品牌:STMicroelectronics 备注:这里有STGW60V60DF多少钱,2025年最近7天走势,今日出价,今日竞价,STGW60V60DF批发/采购报价,STGW60V60DF行情走势销售排行榜,STGW60V60DF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STGW60V60DF

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

STMICROELECTRONICS

意法半导体

STGW60V60DF

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 80A 375W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

STMICROELECTRONICS

意法半导体

STGW60V60DF

600 V、60 A超高速沟槽栅场截止V系列IGBT

STMICROELECTRONICS

意法半导体

STGW60V60DF

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

文件:1.7345 Mbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

STMICROELECTRONICS

意法半导体

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterr

STMICROELECTRONICS

意法半导体

STGW60V60DF产品属性

  • 类型

    描述

  • 型号

    STGW60V60DF

  • 功能描述

    IGBT 晶体管 600V 60A High Speed Trench Gate IGBT

  • RoHS

  • 制造商

    STMicroelectronics

  • 配置

    Single 集电极—发射极最大电压

  • VCEO

    600 V

  • 集电极—射极饱和电压

    2.35 V

  • 栅极/发射极最大电压

    +/- 20 V 在25

  • C的连续集电极电流

    80 A

  • 栅极—射极漏泄电流

    250 nA

  • 功率耗散

    375 W

  • 最大工作温度

    + 175 C

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-9-29 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法半导体)
24+
TO-247
928
原厂订货渠道,支持BOM配单一站式服务
ST
24+
TO-247
5000
十年沉淀唯有原装
ST
23+
TO-247
12500
ST系列在售,可接长单
ST(意法半导体)
2024+
TO-247
500000
诚信服务,绝对原装原盘
ST
1947+
TO-247
30
一级代理,专注军工、汽车、医疗、工业、新能源、电力
STM
23+
TO-247-3
50000
原装正品 支持实单
ST/意法
08+
TO-247
5
ST
24+
TO-247
8000
原装,正品
ST/意法
2450+
TO-247
9850
只做原装正品现货或订货假一赔十!
ST/意法
24+
NA
31680
全新原装现货特价销售 欢迎来电查询

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