Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package

Features • AEC-Q101 qualified • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 200 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Maximum junction temperature: TJ = 175 °C • Dice on direct bond copper

650 V、200 A车规级沟槽栅场截止低损耗M系列IGBT，采用ACEPACK SMIT封装