N-CHANNELCLAMPED14A-D2PAKINTERNALLYCLAMPEDPowerMESH??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thebuiltincollector-gatezenerexhibitsaverypreciseactiveclampingwhilethegate-emitter

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 430V 14A 100W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 430V 14A 100W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

N-CHANNELENHANCEMENTMODEPowerMESHMOSFET

DESCRIPTION Usingthelatesthighvoltagetechnology,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMosfetswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,exceptionala

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

N-CHANNELENHANCEMENTMODEPowerMESHMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,ex

N-Channel650V(D-S)PowerMOSFET

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