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STGB3NC120HD价格
参考价格：￥11.4969
型号：STGB3NC120HDT4 品牌：STMicroelectronics 备注：这里有STGB3NC120HD多少钱，2025年最近7天走势，今日出价，今日竞价，STGB3NC120HD批发/采购报价，STGB3NC120HD行情走势销售排行榜，STGB3NC120HD报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STGB3NC120HD | 7 A, 1200 V very fast IGBT with ultrafast diode Description This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode. Features ■ High voltage capability ■ High speed ■ Very soft ult | STMICROELECTRONICS 意法半导体 |   | |
7 A, 1200 V very fast IGBT with ultrafast diode Description This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode. Features ■ High voltage capability ■ High speed ■ Very soft ult | STMICROELECTRONICS 意法半导体 | | ||
7 A, 1200 V very fast IGBT Features ■ High voltage capability ■ High speed Applications ■ Home appliance ■ Lighting Description This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior | STMICROELECTRONICS 意法半导体 | | ||
Very fast IGBT DESCRIPTION · High voltage capability · High Speed Switching & Low Power Loss · Very ultrafast recovery diode APPLICATIONS • Home appliance • Lighting | ISC 无锡固电 | | ||
7 A, 1200 V very fast IGBT with ultrafast diode Description This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode. Features ■ High voltage capability ■ High speed ■ Very soft ult | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 3A - 1200V TO-220FP FAST PowerMESH??IGBT with Integral Damper Diode 文件：279.22 Kbytes Page：11 Pages | STMICROELECTRONICS 意法半导体 | |
STGB3NC120HD产品属性
- 类型
描述
- 型号
STGB3NC120HD
- 功能描述
IGBT 晶体管 IGBT 1200V 7A PowerMESH Ultrafast
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
D2PAK |
1612 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ST/意法 |
24+ |
D2PAK |
990000 |
明嘉莱只做原装正品现货 |
|||
ST |
1926+ |
D2PAK |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
ST/意法半导体 |
21+ |
D2PAK |
8860 |
只做原装,质量保证 |
|||
ST/意法半导体 |
21+ |
D2PAK |
8860 |
原装现货,实单价优 |
|||
ST/意法半导体 |
24+ |
D2PAK |
16900 |
原装，正品 |
|||
ST/意法半导体 |
22+ |
D2PAK |
10000 |
只有原装,原装,假一罚十 |
|||
ST/意法 |
22+ |
D2PAK |
9000 |
原装正品,支持实单! |
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STGB3NC120HD规格书下载地址
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STGB3NC120HD数据表相关新闻
STGD5H60DF
进口代理
2023-4-24STF202-22T1G
STF202-22T1G
2023-4-20STGD10NC60KDT4
全新原装现货 支持第三方机构验证
2022-6-24STFW4N150
全新原装现货 支持第三方机构验证
2022-6-23STGD5H60DF
原装正品现货
2022-5-7STF40NF20 ST/意法 21+ TO-220F
https://hfx03.114ic.com/
2022-2-17
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