Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

沟槽栅场截止IGBT，M系列，650 V、15 A，低损耗

Trench gate field-stop IGBT M series, 650 V, 15 A low loss

文件：1.08019 Mbytes Page：19 Pages

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are ess

Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.0V@IC= 15A · High Current Capability · High Input Impedance · Low thermal resistance APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter

Trench gate field-stop IGBT M series, 650 V 15 A low loss

文件：910.69 Kbytes Page：15 Pages