型号 功能描述 生产厂家 企业 LOGO 操作
STGB10HF60KD

10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

STMICROELECTRONICS

意法半导体

10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

STMICROELECTRONICS

意法半导体

10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

STMICROELECTRONICS

意法半导体

10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

STMICROELECTRONICS

意法半导体

10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

STMICROELECTRONICS

意法半导体

10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

STMICROELECTRONICS

意法半导体

10 A - 600 V - short-circuit rugged IGBT

Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High fre

STMICROELECTRONICS

意法半导体

Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode

文件:760.14 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

更新时间:2025-12-16 8:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
22+
D2PAK
95807
ST
23+
D2PAK
20000
ST(意法半导体)
24+
D2PAK
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ST(意法)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ST/意法
25+
原厂原封可拆
54685
百分百原装现货有单来谈
ST
24+
D2PAK
25836
新到现货,只做全新原装正品
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
25+
D2PAK
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
SST
原厂封装
9800
原装进口公司现货假一赔百
ST
2526+
原厂封装
50000
15年芯片行业经验/只供原装正品:0755-83268812邹小姐

STGB10HF60KD数据表相关新闻