Super high dense cell design for low RDS(ON).

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Suface Mount Package. ● ESD HBM > 2KV.

Mosfets

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The 8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product 8810 is Pb-free (meets RO

Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel 25-V (D-S) MOSFET

文件：973.56 Kbytes Page：8 Pages

N-channel power MOS field effect tube

文件：270.42 Kbytes Page：1 Pages

Thermally Conductive Adhesive Transfer Tapes

文件：175.98 Kbytes Page：7 Pages