isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power

N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features • 100 avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectron

N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET

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N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

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N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features • 100 avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectron

N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

文件：765.91 Kbytes Page：15 Pages

isc N-Channel MOSFET Transistor

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THINKISEMI 1000V/1200V/1500V N-Channel Power MOSFETs

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THINKISEMI 1000V/1200V/1500V N-Channel Power MOSFETs

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Power switch circuit of adaptor and charger.

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N-channel Enhanced VDMOSFETs

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