N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features • 100 avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectron

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power

N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET

文件：484.07 Kbytes Page：16 Pages

N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

文件：765.91 Kbytes Page：15 Pages

N沟道1500 V、6 Ohm典型值、2.5 A PowerMESH(TM) 功率MOSFET，TO-3PF封装

N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features • 100 avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.) Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectron

N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

文件：765.91 Kbytes Page：15 Pages

isc N-Channel MOSFET Transistor

文件：306.9 Kbytes Page：2 Pages

THINKISEMI 1000V/1200V/1500V N-Channel Power MOSFETs

文件：697.32 Kbytes Page：1 Pages

THINKISEMI 1000V/1200V/1500V N-Channel Power MOSFETs

文件：697.32 Kbytes Page：1 Pages

Power switch circuit of adaptor and charger.

文件：364.03 Kbytes Page：6 Pages

N-channel Enhanced VDMOSFETs

文件：427.84 Kbytes Page：6 Pages