型号 功能描述 生产厂家 企业 LOGO 操作
STFU13N80K5

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V APPLICATIONS · Switching

ISC

无锡固电

STFU13N80K5

N沟道800 V、0.37 Ohm典型值、12 A MDmesh K5功率MOSFET,TO-220FP超窄引线封装

STMICROELECTRONICS

意法半导体

STFU13N80K5

N-channel 800 V, 0.37 廓 typ., 12 A MDmesh??K5 Power MOSFET in a TO-220FP ultra narrow leads package

文件:754.17 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.37, 12 A Zener-protected SuperMESH 5 Power MOSFET in D짼PAK, TO-220FP and TO-220 packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.45Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel 800 V, 0.37, 12 A Zener-protected SuperMESH 5 Power MOSFET in D짼PAK, TO-220FP and TO-220 packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 techno

STMICROELECTRONICS

意法半导体

更新时间:2025-12-13 17:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法半导体
21+
TO-220FP-3
8860
原装现货,实单价优
ST/意法半导体
21+
TO-220FP-3
8860
只做原装,质量保证
ST/意法半导体
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
ST/意法半导体
23+
TO-220FP-3
12820
正规渠道,只有原装!
ST
22+
TO2203
9000
原厂渠道,现货配单
ST/意法半导体
23+
N/A
20000
ST/意法半导体
23+
TO-220FP-3
16900
公司只做原装,可来电咨询
ST/意法半导体
25+
原厂封装
10280
ST/意法半导体
24+
TO-220FP-3
16960
原装正品现货支持实单
STM
21+
1000
TO-220FP ULTRA NARROW LEADS

STFU13N80K5数据表相关新闻