N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.45Ω(Max)@VGS=10V APPLICATIONS ·Switching

N-channel800V,0.37廓typ.,12AMDmesh??K5PowerMOSFETinaTO-220FPultranarrowleadspackage

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N-channel800V,0.37,12AZener-protectedSuperMESH5PowerMOSFETinD짼PAK,TO-220FPandTO-220packages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

N-channel800V,0.37Ωtyp.,12AMDmesh™K5PowerMOSFETsinD²PAK,TO-220FP,TO-220andTO-247

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

N-channel800V,0.37,12AZener-protectedSuperMESH5PowerMOSFETinD짼PAK,TO-220FPandTO-220packages

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

N-channel800V,0.37Ωtyp.,12AMDmesh™K5PowerMOSFETsinD²PAK,TO-220FP,TO-220andTO-247

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh™K5 techno

N-channel800V,0.37??typ.,12AMDmesh??K5PowerMOSFETinanI짼PAKFPpackage

Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhighefficie