N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages

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N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications  LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M

N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications  LCC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using MDmesh™ M

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency

N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages

文件：827.38 Kbytes Page：15 Pages