isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 0.95Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220FP

Description These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for a

N沟道800 V、0.8 Ohm典型值、6 A MDmesh K5功率MOSFET，TO-220FP封装

800V N-CHANNEL MOSFET

DESCRIPTION The UTC8N80 is an N-channel mode Power FET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and co

Drain Current ?밒D= 8A@ TC=25C

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8A 800V N-channel Enhancement Mode Power MOSFET

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8A 800V N-channel Enhancement Mode Power MOSFET

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8A 800V N-channel Enhancement Mode Power MOSFET

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