STP7N65M2价格
参考价格：￥5.0790
型号：STP7N65M2 品牌：STMicroelectronics 备注：这里有STP7N65M2多少钱，2026年最近7天走势，今日出价，今日竞价，STP7N65M2批发/采购报价，STP7N65M2行情走势销售排行榜，STP7N65M2报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP7N65M2 | 丝印代码：7N65M2；N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most dem | STMICROELECTRONICS 意法半导体 |   | |
STP7N65M2 | N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220 package These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high eff • Extremely low gate charge\n• Excellent output capacitance (Coss) profile• 100% avalanche tested\n• Zener-protected; | STMICROELECTRONICS 意法半导体 | | |
Extremely low gate charge Description This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demand | STMICROELECTRONICS 意法半导体 | | ||
Extremely low gate charge Description This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demand | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：7N65M2；N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most dem | STMICROELECTRONICS 意法半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：2.091489 Mbytes Page：7 Pages | DOINGTER 杜因特 | |
STP7N65M2产品属性
- 类型
描述
- Package：
TO-220AB
- Grade：
Industrial
- VDSS(V)：
650
- RDS(on)_max(@ VGS=10V)(Ω)：
1.15
- Drain Current (Dc)_max(A)：
5
- PTOT_max(W)：
60
- Qg_typ(nC)：
9
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
ST/意法 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
ST/意法 |
19+ |
TO-220-3 |
12000 |
正规报关原装现货系列订货技术支持 |
|||
ST/意法 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
ST/意法 |
26+ |
43600 |
全新原装现货,假一赔十 |
||||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST/意法 |
24+ |
TO-220-3 |
3000 |
只做原装，欢迎询价，量大价优 |
|||
ST/意法 |
25+ |
TO220 |
20000 |
原装 |
|||
ST |
TO-220 |
21+ |
50000 |
原装正品现货 支持BOM配单! |
|||
ST/意法 |
25+ |
TO-220 |
957 |
只做原装进口!正品支持实单! |
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STP7N65M2规格书下载地址
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2020-6-26
DdatasheetPDF页码索引
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