Ultra low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

N沟道800 V、1.3 Ohm典型值、4.5 A MDmesh K5功率MOSFET，TO-220FP封装

6.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC6N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

N-Channel Enhancement Mode

Standard Power MOSFET N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Low package inductance (

Simple Drive Requirements

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N-Channel Power MOSFET

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6A, 800V N-CHANNEL POWER MOSFET

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