isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.4A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道650 V、1.1 Ohm典型值、5.4 A SuperMESH3(TM) 功率MOSFET，TO-220FP封装

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab • 100% avalanche tested \n• Extremely high dv/dt capability \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP narrow leads package

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for • 100% avalanche tested\n• Extremely high dv/dt capability\n• Gate charge minimized• Very low intrinsic capacitance\n• Improved diode reverse recovery characteristics\n• Zener-protected;

N沟道650 V、1.2 Ohm典型值、4 A MDmesh M2功率MOSFET，TO-220FP封装

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

丝印代码：6N65K3；N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK

文件：906.85 Kbytes Page：16 Pages

Extremely low gate charge

文件：737.76 Kbytes Page：18 Pages

N-Channel MOSFET 650V, 6.0A, 1.45ohm

文件：789.69 Kbytes Page：6 Pages

N-channel MOSFET

文件：561.7 Kbytes Page：7 Pages

N-channel MOSFET

文件：561.7 Kbytes Page：7 Pages

N-channel MOSFET

文件：561.7 Kbytes Page：7 Pages

N-channel MOSFET

文件：561.7 Kbytes Page：7 Pages