isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.4A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.35Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK

文件：906.85 Kbytes Page：16 Pages

N沟道650 V、1.1 Ohm典型值、5.4 A SuperMESH3(TM) 功率MOSFET，TO-220FP封装

N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP narrow leads package

N沟道650 V、1.2 Ohm典型值、4 A MDmesh M2功率MOSFET，TO-220FP封装

Extremely low gate charge

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6.2A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching p

N-CHANNEL POWER MOSFET

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Drain Current ID= 6.2A@ TC=25C

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N-CHANNEL POWER MOSFET

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650V N-Channel Power MOSFET

文件：1.99995 Mbytes Page：8 Pages