iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=520V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

N-channel520V,1.22廓,4.4A,TO-220,IPAK,I2PAK,DPAK,TO-220FPZener-protectedSuperMESH??PowerMOSFET

文件：777.75 Kbytes Page：17 Pages

N-Channel650V(D-S)SuperJunctionPowerMOSFET

文件：1.17288 Mbytes Page：11 Pages

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=520V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

N-channel520V,1.22廓,4.4A,TO-220,IPAK,I2PAK,DPAK,TO-220FPZener-protectedSuperMESH??PowerMOSFET

文件：777.75 Kbytes Page：17 Pages

N-channel520V-1.22廓-4.4A-TO-220-DPAK-I2PAK-IPAKZener-protectedSuperMESH??PowerMOSFET

文件：396.17 Kbytes Page：17 Pages