STF5N95K5价格
参考价格：￥6.0249
型号：STF5N95K5 品牌：STMicroelectronics 备注：这里有STF5N95K5多少钱，2026年最近7天走势，今日出价，今日竞价，STF5N95K5批发/采购报价，STF5N95K5行情走势销售排行榜，STF5N95K5报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STF5N95K5 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STF5N95K5 | Ultra-low gate charge Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi | STMICROELECTRONICS 意法半导体 | | |
STF5N95K5 | N沟道950 V、2 Ohm典型值、3.5 A MDmesh K5功率MOSFET，TO-220FP封装 This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected; | STMICROELECTRONICS 意法半导体 | | |
Ultra-low gate charge Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi | STMICROELECTRONICS 意法半导体 | | ||
Ultra-low gate charge Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Ultra-low gate charge Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi | STMICROELECTRONICS 意法半导体 | |
STF5N95K5产品属性
- 类型
描述
- Package：
TO-220FP
- Grade：
Industrial
- VDSS(V)：
950
- RDS(on)_max(@ VGS=10V)(Ω)：
2.5
- Drain Current (Dc)_max(A)：
3.5
- PTOT_max(W)：
25
- Qg_typ(nC)：
7
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
25+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
|||
ST |
15+ |
TO220 |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
ST(意法) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ST/意法半导体 |
26+ |
TO-220-3 |
10000 |
十年沉淀唯有原装 |
|||
ST/意法 |
26+ |
TO-220F |
3000 |
专注全新正品,优势现货供应 |
|||
ST/意法 |
2540+ |
TO220 |
9875 |
只做原装正品现货或订货假一赔十! |
|||
ST/意法 |
2020+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
|||
ST全系列 |
25+23+ |
TO-220F |
25830 |
绝对原装正品全新进口深圳现货 |
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https://hfx03.114ic.com/
2022-2-17
DdatasheetPDF页码索引
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