型号 功能描述 生产厂家 企业 LOGO 操作
STU5N95K5

Ultra-low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

STMICROELECTRONICS

意法半导体

STU5N95K5

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STU5N95K5

N-channel 950 V, 2 Ohm typ., 3.5 A MDmesh K5 Power MOSFET in an IPAK package

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Ultra-low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Ultra-low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

STMICROELECTRONICS

意法半导体

Ultra-low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

STMICROELECTRONICS

意法半导体

更新时间:2026-1-5 13:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
2025+
5000
原装进口,免费送样品!
ST
22+
TO2513 Short Leads IPak TO251A
9000
原厂渠道,现货配单
ST/意法
23+
TO251
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
STM
23+
TO-251 IPAK
50000
原装正品 支持实单
ST/意法
22+
IPAK
20000
公司只做原装 品质保障
STMICRO
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
SST
原厂封装
9800
原装进口公司现货假一赔百
ST(意法)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ST/意法半导体
25+
原厂封装
9999
STM
21+
TO-251 IPAK
9000
15年光格 只做原装正品

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