Isc N-Channel MOSFET Transistor

• FEATURES • Static drain-source on-resistance: RDS(on)≤18mΩ • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features • Among the lowest RDS(on) on

N-Channel 100-V (D-S) MOSFET

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N沟道100 V、0.013 Ohm典型值、45 A STripFET F7功率MOSFET，TO-220封装

丝印代码：DPAK；isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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Ultra low on-resistance

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