SMALL SIGNAL NPN TRANSISTOR

SMALL SIGNAL NPN TRANSISTOR ■ SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR ■ MINIATURE SOT-89 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE PNP COMPLEMENTARY TYPE IS STF92 APPLICATIONS ■ VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) ■ TELEPHONE

N-channel 600 V, 0.076 ??typ., 34 A MDmesh??M2 EP Power MOSFETs in TO-220FP and TO-3PF packages

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses,

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID=33A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 79mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching appl

N-channel 650 V, 0.070 廓, 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247

Description MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silic

N-channel 650 V, 0.070 ?? 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247

Description MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silic

N沟道600 V、0.076 Ohm典型值、34 A MDmesh M2 EP功率MOSFET，TO-220FP封装

N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET

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N沟道650 V、0.070 Ohm典型值、33 A MDmesh M5功率MOSFET，TO-220FP封装