isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 3.5Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 800 V, 2.8 廓 typ., 2.5 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

Power MOSFET

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N沟道800 V、2.8 Ohm典型值、2.5 A MDmesh K5功率MOSFET，TO-220FP封装

2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer

3 Amps, 800 Volts N-CHANNEL POWER MOSFET

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3 Amps, 800 Volts N-CHANNEL POWER MOSFET

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Fast Switching

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N-Channel Power MOSFET

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