位置：首页 > IC中文资料第10511页 > 3N80
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
3N80 | 2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 |   | |
3N80 | 3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | |
3N80 | N-Channel Power MOSFET 文件：398.32 Kbytes Page：8 Pages | NELLSEMI 尼尔半导体 | | |
3N80 | Fast Switching 文件：49.87 Kbytes Page：2 Pages | ISC 无锡固电 | | |
3N80 | 3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | |
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
3 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) | UTC 友顺 | | ||
3 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) | UTC 友顺 | | ||
Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
3 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：167.5 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3.0A竊?00V N-CHANNEL MOSFET 文件：304.04 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
Power MOSFET 文件：1.29088 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.29085 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.29084 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：162.56 Kbytes Page：2 Pages | ISC 无锡固电 | |
3N80产品属性
- 类型
描述
- 型号
3N80
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC |
2024+ |
TO-252 |
500000 |
诚信服务,绝对原装原盘 |
|||
士兰微 |
21+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
|||
FSC/TRUES |
25+23+ |
TO-220 |
25489 |
绝对原装正品全新进口深圳现货 |
|||
ON/安森美 |
2410+ |
TO-220 |
16500 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
ST |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
N/A |
24+ |
TO-220F |
5000 |
全新原装正品,现货销售 |
|||
UTC/友顺 |
23+ |
TO-252 |
8400 |
专注配单,只做原装进口现货 |
|||
士兰微 |
21+ |
TO-220F |
425300 |
||||
UTC/友顺 |
25+ |
TO252 |
55000 |
UTC/友顺3N80L-TN3-R即刻询购立享优惠#长期有货 |
|||
FSC |
15+ |
TO-220 |
8580 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
3N80规格书下载地址
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