| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：3N80；N-Channel Enhancement Mosfet Features 800V,3A RDS(ON) | RECTRON 丽正 |   | ||
3N80 | 3A, 800V N-CHANNEL POWER MOSFET The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON)=3.2Ω @VGS=10 V \n• Low Reverse Transfer Capacitance ( CRSS = Typical 11 pF ) \n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness; | UTC 友顺 | | |
3N80 | 2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | |
3N80 | 3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | |
3N80 | N-Channel Power MOSFET 文件：398.32 Kbytes Page：8 Pages | NELLSEMI 尼尔半导体 | | |
3N80 | Fast Switching 文件：49.87 Kbytes Page：2 Pages | ISC 无锡固电 | | |
3N80 | 3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | |
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FAIRCHILD 仙童半导体 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer | UTC 友顺 | | ||
3 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) | UTC 友顺 | | ||
3 Amps, 800Volts N-CHANNEL POWER MOSFET The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON)=3.2Ω @VGS=10 V \n• Low Reverse Transfer Capacitance ( CRSS = Typical 11 pF )\n• Avalanche Energy Specified \n• Improved dv/dt Capability, High Ruggedness; | UTC 友顺 | | ||
3 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) | UTC 友顺 | | ||
Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
3 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：167.5 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Planar Power MOSFET (N-CH) | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3.0A竊?00V N-CHANNEL MOSFET 文件：304.04 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
Power MOSFET 文件：1.29088 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.29085 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：222.92 Kbytes Page：6 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.29084 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
3 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：210.29 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：260.79 Kbytes Page：8 Pages | UTC 友顺 | | ||
isc N-Channel MOSFET Transistor 文件：162.56 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FAIRCHILD 仙童半导体 | | ||
N-CHANNEL POWER MOSFETS 文件：281.01 Kbytes Page：5 Pages | SAMSUNG 三星 | | ||
ADVANCED POWER MOSFET 文件：321.97 Kbytes Page：6 Pages | SAMSUNG 三星 | |
3N80产品属性
- 类型
描述
- Vdss(V)：
800
- Vgss(V)：
30
- Id(A)：
3
- Package：
TO-220/TO-220F/TO-22...
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EMLSI |
2016+ |
BGA |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ENDRIVE(常州能动) |
25+ |
插件 |
685 |
全新原装 |
|||
RAMSWAY |
2402+ |
FBGA48 |
8324 |
原装正品!实单价优! |
|||
RAMSWA |
0651+ |
SMD |
2204 |
全新 发货1-2天 |
|||
AMD |
24+ |
5000 |
公司存货 |
||||
AMD |
2023+ |
PLCC |
50000 |
原装现货 |
|||
EMLSI |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
亚成微 |
25+ |
TSSOP20 |
7500 |
亚成微全系列在售 |
|||
RAMSWA |
25+ |
90000 |
全新原装现货 |
||||
RECTRON |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
3N80规格书下载地址
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DdatasheetPDF页码索引
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