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Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmesh™M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

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Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Applications Switchingapplications Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell

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Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell-known andconsolidatedMDmeshfamilyof

N-channel600V,91m廓typ.,25AMDmesh??M6PowerMOSFETinaPowerFLAT??8x8HVpackage

文件：418.34 Kbytes Page：15 Pages

N-channel600V,85m廓typ.,30A,MDmeshM6PowerMOSFETinaTO?멛Lpackage

文件：1.5619 Mbytes Page：15 Pages