位置：首页 > IC中文资料第5603页 > STF11NM65
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-channel 650 V, 0.425 廓 typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit | STMICROELECTRONICS 意法半导体 |   | ||
N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit | STMICROELECTRONICS 意法半导体 | | ||
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220FP package | STMICROELECTRONICS 意法半导体 | | ||
N-channel 650 V, 0.425 廓 typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit | STMICROELECTRONICS 意法半导体 | | ||
N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.032569 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：323.45 Kbytes Page：2 Pages | ISC 无锡固电 | |
STF11NM65产品属性
- 类型
描述
- 型号
STF11NM65
- 功能描述
MOSFET N-Channel 650V Pwr Mosfet
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
ST |
24+ |
T0-220F |
16900 |
支持样品,原装现货,提供技术支持! |
|||
ST |
25+ |
TO-220F |
16900 |
原装，请咨询 |
|||
ST |
26+ |
TO-220F |
60000 |
只有原装 可配单 |
|||
ST |
25+ |
原厂原封装 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
ST/意法 |
2450+ |
TO-220F |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST(意法半导体) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ST |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
24+ |
N/A |
78000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ST |
14+ |
TO-220F |
38 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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DdatasheetPDF页码索引
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