N-CHANNEL 30V - 9.2mohm - 40A - DPAK/IPAK STripFET TM III Power MOSFET

Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduc

N-Channel 30-V (D-S) MOSFET

文件：1.01976 Mbytes Page：8 Pages

N-CHANNEL 30V - 9.2mohm - 40A - DPAK/IPAK STripFET TM III Power MOSFET

N-CHANNEL 30V - 9.2mohm - 40A - DPAK/IPAK STripFET TM III Power MOSFET

Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduc

N-Channel 30-V (D-S) MOSFET

文件：1.68784 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01979 Mbytes Page：8 Pages

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance • Logic level

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance • Logic level

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance • Logic level