N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance • Logic level

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel TrenchMOS transistor Logic level FET

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

30V, 50A N-CHANNEL,FAST SWITCHING MOSFET

DESCRIPTION FEATURE The AM50N03 is available in PDFN8(3.3x3.3) FEATURE  Super Low Gate Charge  Excellent CdV/dt Effect Decline  Advanced High Cell Density Trench Technology APPLICATION  High frequency switching mode power supply

50 Amps, 30 Volts N-CHANNEL MOSFET

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N-Channel 30-V (D-S) MOSFET

文件：959.96 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01805 Mbytes Page：8 Pages