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STD11NM60N价格
参考价格：￥8.0012
型号：STD11NM60ND 品牌：STMicroelectronics 备注：这里有STD11NM60N多少钱，2025年最近7天走势，今日出价，今日竞价，STD11NM60N批发/采购报价，STD11NM60N行情走势销售排行榜，STD11NM60N报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD11NM60N | N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 |   | |
STD11NM60N | N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | |
STD11NM60N | N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | |
STD11NM60N | N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET 文件：623.95 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | |
STD11NM60N | isc N-Channel Mosfet Transistor 文件：323.32 Kbytes Page：2 Pages | ISC 无锡固电 | | |
STD11NM60N | N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in a DPAK package | STMICROELECTRONICS 意法半导体 | | |
N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET 文件：623.95 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel Mosfet Transistor 文件：331.58 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET 文件：623.95 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor 文件：324.69 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK 文件：756.46 Kbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | | ||
N沟道600 V、0.37 Ohm典型值、10 A FDmesh II功率MOSFET，DPAK封装 | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK 文件：756.46 Kbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode) DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.032609 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET 文件：357.14 Kbytes Page：16 Pages | STMICROELECTRONICS 意法半导体 | |
STD11NM60N产品属性
- 类型
描述
- 型号
STD11NM60N
- 功能描述
MOSFET N-channel MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3289 |
原厂直销,现货供应,账期支持! |
|||
ST/意法 |
2450+ |
TO252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
STMicroelectronics Asia Pacifi |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
ST |
24+ |
D-PAK |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
ST |
24+ |
TO-252 |
7500 |
||||
ST |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
ST |
2447 |
SOT-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST(意法) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
ST/意法 |
16+17+ |
TO252 |
2500 |
原装现货 |
|||
ST |
23+ |
14PBF |
6996 |
只做原装正品现货 |
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STD11NM60N规格书下载地址
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STD11NM60N数据表相关新闻
STD105N10F7AG
全新原装现货 支持第三方机构验证
2022-6-23STD120N4F6 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STD120N4F6 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 STMicroelectronics 包装：2500 封装：TO-252-3
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製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: SMD/SMT 封裝/外殼: TO-252-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 80 V Id - C連續漏極電流: 80 A Rds On - 漏-源電阻: 6.5 mOhms Vgs - 閘極-源極電壓: - 20 V， + 20 V Vgs th - 門源門限電壓 : 4.5 V
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