N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption

N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

文件：364.29 Kbytes Page：16 Pages

Isc N-Channel MOSFET Transistor

文件：317.79 Kbytes Page：2 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.035069 Mbytes Page：8 Pages

N沟道600 V、0.4 Ohm典型值、11 A MDmesh功率MOSFET，TO-220封装

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.45Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip techniq

N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip techniq

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.45Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA

N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi

N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

文件：364.29 Kbytes Page：16 Pages

N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET

文件：357.14 Kbytes Page：16 Pages

N-channel 600 V, 0.38 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 package

isc N-Channel Mosfet Transistor

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N-Channel 650 V (D-S) MOSFET

文件：1.035089 Mbytes Page：8 Pages

isc N-Channel Mosfet Transistor

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isc N-Channel Mosfet Transistor

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MOSFET N-CH 600V 11A TO220FP

N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

文件：364.29 Kbytes Page：16 Pages

N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET

文件：623.95 Kbytes Page：21 Pages

isc N-Channel Mosfet Transistor

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N-Channel 650 V (D-S) MOSFET

文件：1.03505 Mbytes Page：8 Pages

isc N-Channel MOSFET Transistor

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N-Channel 650 V (D-S) MOSFET

文件：1.03501 Mbytes Page：8 Pages

N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

文件：756.46 Kbytes Page：19 Pages

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA