位置：首页 > IC中文资料第109页 > STD11NM60N-1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD11NM60N-1 | N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 |   | |
STD11NM60N-1 | N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | |
STD11NM60N-1 | N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | |
STD11NM60N-1 | 丝印代码：IPAK；isc N-Channel Mosfet Transistor 文件：331.58 Kbytes Page：2 Pages | ISC 无锡固电 | | |
STD11NM60N-1 | N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET 文件：623.95 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | |
N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET 文件：623.95 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET 文件：623.95 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | |
STD11NM60N-1产品属性
- 类型
描述
- 型号
STD11NM60N-1
- 功能描述
MOSFET N Ch 600V 0.37 Ohm 10A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
STMicroelectronics |
25+ |
N/A |
18746 |
样件支持,可原厂排单订货! |
|||
SANKEN |
23+ |
TO3P-5Pin |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
SDT |
23+ |
DIP |
50000 |
全新原装正品现货,支持订货 |
|||
SANKEN |
25+ |
TO3P-5Pin |
880000 |
明嘉莱只做原装正品现货 |
|||
三肯 |
22+ |
TO-3P-5L |
20000 |
公司只做原装 品质保障 |
|||
ST |
25+ |
DIP |
20000 |
原装，请咨询 |
|||
三肯 |
24+ |
TO-3P-5L |
5000 |
全新原装正品,现货销售 |
|||
24+ |
SMD |
93 |
本站现库存 |
||||
三肯 |
24+ |
TO-3P-5L |
25836 |
新到现货，只做全新原装正品 |
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STD11NM60N-1规格书下载地址
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STD11NM60N-1数据表相关新闻
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全新原装现货 支持第三方机构验证
2022-6-23STD120N4F6 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STD120N4F6 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 STMicroelectronics 包装：2500 封装：TO-252-3
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