位置：首页 > IC中文资料第109页 > STD11NM60N-1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD11NM60N-1 | N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 |   | |
STD11NM60N-1 | N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | |
STD11NM60N-1 | N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | |
STD11NM60N-1 | isc N-Channel Mosfet Transistor 文件：331.58 Kbytes Page：2 Pages | ISC 无锡固电 | | |
STD11NM60N-1 | N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET 文件：623.95 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | |
N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET 文件：623.95 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel Mosfet Transistor 文件：357.17 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET 文件：623.95 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | |
STD11NM60N-1产品属性
- 类型
描述
- 型号
STD11NM60N-1
- 功能描述
MOSFET N Ch 600V 0.37 Ohm 10A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
IPAKTO-251 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ST |
2526+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83268577邹小姐 |
|||
ST/意法半导体 |
23+ |
TO-252-3 |
12820 |
正规渠道,只有原装! |
|||
ST/意法半导体 |
2020+ |
TO-252-3 |
7600 |
只做原装正品,卖元器件不赚钱交个朋友 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法 |
20+ |
SOT252 |
15000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法半导体 |
25 |
TO-252-3 |
6000 |
原装正品 |
|||
ST/意法半导体 |
23+ |
TO-252-3 |
12700 |
买原装认准中赛美 |
|||
STM |
25+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
ST |
24+ |
TO252DPAK |
8866 |
STD11NM60N-1规格书下载地址
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STD11NM60N-1数据表相关新闻
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全新原装现货 支持第三方机构验证
2022-6-23STD120N4F6 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STD120N4F6 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 STMicroelectronics 包装：2500 封装：TO-252-3
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製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: SMD/SMT 封裝/外殼: TO-252-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 80 V Id - C連續漏極電流: 80 A Rds On - 漏-源電阻: 6.5 mOhms Vgs - 閘極-源極電壓: - 20 V， + 20 V Vgs th - 門源門限電壓 : 4.5 V
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