STB19NF20价格

参考价格:¥2.1537

型号:STB19NF20 品牌:STMicroelectronics 备注:这里有STB19NF20多少钱,2025年最近7天走势,今日出价,今日竞价,STB19NF20批发/采购报价,STB19NF20行情走势销售排行榜,STB19NF20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STB19NF20

N-channel 200V - 0.15廓 - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY??Power MOSFET

Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ Extremely high dv/dt capability ■ Gate charge minimized ■

STMICROELECTRONICS

意法半导体

STB19NF20

N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages

Features • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance Applications • Switching applications Description These Power MOSFETs are designed using STMicroelectronics' consolidated striplayout- based MESH OVERLAY™ process. The result is a

STMICROELECTRONICS

意法半导体

STB19NF20

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.16Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STB19NF20

N沟道200 V、0.11 Ohm典型值、15 A MESH OVERLAY功率MOSFET,D2PAK封装

STMICROELECTRONICS

意法半导体

N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages

Features • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance Applications • Switching applications Description These Power MOSFETs are designed using STMicroelectronics' consolidated striplayout- based MESH OVERLAY™ process. The result is a

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.16Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages

Features • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance Applications • Switching applications Description These Power MOSFETs are designed using STMicroelectronics' consolidated striplayout- based MESH OVERLAY™ process. The result is a

STMICROELECTRONICS

意法半导体

STB19NF20产品属性

  • 类型

    描述

  • 型号

    STB19NF20

  • 功能描述

    MOSFET 200V 0.15Ohm 15A N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
50
优势代理渠道,原装正品,可全系列订货开增值税票
ST
2016+
TO263
3000
只做原装,假一罚十,公司可开17%增值税发票!
ST
11+
TO-263
13
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
20+
D2PAK
36900
原装优势主营型号-可开原型号增税票
ST
23+
TO263
6996
只做原装正品现货
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
22+
TO263
12245
现货,原厂原装假一罚十!
ST/意法半导体
23+
TO-263-3
12700
买原装认准中赛美
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
SST
原厂封装
9800
原装进口公司现货假一赔百

STB19NF20芯片相关品牌

STB19NF20数据表相关新闻

  • STB35N65DM2

    STB35N65DM2芯片是一种功能强大、性能稳定的高性能功率MOSFET,具有广泛的应用前景。它的高效率、可靠性和多种保护功能使得它成为各种功率应用中的理想选择,将为工业、汽车和消费电子等领域的发展提供强大的支持。

    2023-11-24
  • STB12NM50ND

    STB12NM50ND

    2023-8-2
  • STB13NM60N

    热卖-原装正品现货

    2022-8-11
  • STBC08PMR

    STBC08PMR 电池充电管理芯片 ST 封装DFN6

    2022-8-2
  • STB20N90K5 瑞智芯 只有原装

    深圳市瑞智芯科技有限公司 联系人:彭先生 QQ:2851196982 直线:0755-82991809 手机:13787628849 邮箱:pc@szruizhixin.com 地址:深圳市福田区中航路42号中航北苑大厦A座6A2 型号:STB20N90K5 类别 分立半导体产品 晶体管 - FET,MOSFET - 单个 制造商 STMicroelectronics 包装:1000 封装:TO-263-3

    2021-9-18
  • STA516BETR音频IC现货供应

    STA516BETR音频IC现货供应

    2019-12-5