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STF19NF20价格
参考价格：￥3.2101
型号：STF19NF20 品牌：STMicroelectronics 备注：这里有STF19NF20多少钱，2026年最近7天走势，今日出价，今日竞价，STF19NF20批发/采购报价，STF19NF20行情走势销售排行榜，STF19NF20报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STF19NF20 | N-channel 200V - 0.15廓 - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY??Power MOSFET Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ Extremely high dv/dt capability ■ Gate charge minimized ■ | STMICROELECTRONICS 意法半导体 |   | |
STF19NF20 | 丝印代码：19NF20；N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages Features • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance Applications • Switching applications Description These Power MOSFETs are designed using STMicroelectronics' consolidated striplayout- based MESH OVERLAY™ process. The result is a | STMICROELECTRONICS 意法半导体 | | |
STF19NF20 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.16Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STF19NF20 | N沟道200 V、0.11 Ohm典型值、11 A MESH OVERLAY功率MOSFET，TO-220FP封装 | STMICROELECTRONICS 意法半导体 | | |
STF19NF20 | N-Channel MOSFET uses advanced trench technology 文件：1.01258 Mbytes Page：5 Pages | DOINGTER 杜因特 | | |
N-channel 200V - 0.15廓 - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY??Power MOSFET Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ Extremely high dv/dt capability ■ Gate charge minimized ■ | STMICROELECTRONICS 意法半导体 | | ||
N-channel 200V - 0.15廓 - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY??Power MOSFET Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ Extremely high dv/dt capability ■ Gate charge minimized ■ | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：19NF20；N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages Features • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance Applications • Switching applications Description These Power MOSFETs are designed using STMicroelectronics' consolidated striplayout- based MESH OVERLAY™ process. The result is a | STMICROELECTRONICS 意法半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.81853 Mbytes Page：5 Pages | DOINGTER 杜因特 | |
STF19NF20产品属性
- 类型
描述
- 型号
STF19NF20
- 功能描述
MOSFET N Ch 55V 3.2 120A Pwr MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
25+ |
N/A |
11543 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
2016+ |
TO-220F |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
ST MICROELECTRONICS |
25+ |
800 |
公司优势库存 热卖中! |
||||
ST |
20+ |
TO-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
ST/意法半导体 |
26+ |
TO-220-3 |
60000 |
只有原装 可配单 |
|||
ST |
14+ |
TO-220 |
48 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法半导体 |
24+ |
TO-220-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ST/意法半导体 |
23+ |
TO-220-3 |
12700 |
买原装认准中赛美 |
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