N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to e

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET ■ TYPICAL Ros(on) = 0.65 Q ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY APPLICATIONS

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET ■ TYPICAL Ros(on) = 0.65 Q ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY APPLICATIONS

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH?줡ower MOSFET

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET ■ TYPICAL Ros(on) = 0.65 Q ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY APPLICATIONS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 800V - 0.65廓 - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH??Power MOSFET

文件：522.929 Kbytes Page：16 Pages

N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

Features ■ Extremely high dv/dt capability ■ Improved esd capability ■ 100 avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing reliability Applications ■ Switching applications Description These devices are N-channel Zener-protected Pow

N-CHANNEL 800V - 0.65 OHM - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH Power MOSFET

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to e

N-channel 800V - 0.65廓 - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH??Power MOSFET

文件：522.929 Kbytes Page：16 Pages

N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET

文件：212.89 Kbytes Page：9 Pages