Description

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Features

■ Extremely high dv/dt capability

■ Improved esd capability

■ 100 avalanche tested

■ Gate charge minimized

■ Very low intrinsic capacitances

■ Very good manufacturing reliability

Applications

■ Switching applications