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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STB11NB40 | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 |   | |
STB11NB40 | N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | |
STB11NB40 | N-Channel 650 V (D-S) MOSFET 文件：1.04023 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 400V - 0.48ohm - 10.7A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
Power MOSFET 文件：1.02456 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
STB11NB40产品属性
- 类型
描述
- 型号
STB11NB40
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
1300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
23+ |
TO263 |
20000 |
全新原装假一赔十 |
|||
ST/意法 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
STM |
20+ |
TO-263 |
95 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
2020+ |
SOT263 |
3620 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST/意法 |
24+ |
TO-263 |
504181 |
免费送样原盒原包现货一手渠道联系 |
|||
ST |
23+ |
TO-263 |
8795 |
||||
ST |
06+ |
TO-263 |
8000 |
原装库存 |
|||
ST |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
ST |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
STB11NB40规格书下载地址
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STB20N90K5 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 STMicroelectronics 包装：1000 封装：TO-263-3
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2013-2-6
DdatasheetPDF页码索引
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