位置：首页 > IC中文资料第6025页 > STB11NB40
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STB11NB40 | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 |   | |
STB11NB40 | N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | |
STB11NB40 | N-Channel 650 V (D-S) MOSFET 文件：1.04023 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | |
N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 400V - 0.48ohm - 10.7A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
Power MOSFET 文件：1.02456 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
STB11NB40产品属性
- 类型
描述
- 型号
STB11NB40
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
ST/意法 |
24+ |
NA/ |
1300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST/意法 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
ST/意法 |
24+ |
TO-263 |
504181 |
免费送样原盒原包现货一手渠道联系 |
|||
ST/意法 |
23+ |
SOT-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
23+ |
TO-263 |
8795 |
||||
ST/意法 |
24+ |
TO-263 |
5000 |
只做原厂渠道 可追溯货源 |
|||
ST |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
ST |
17+ |
I2PAK |
6200 |
STB11NB40规格书下载地址
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2013-2-6
DdatasheetPDF页码索引
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