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STP11NB40价格
参考价格：￥8.2224
型号：STP11NB40 品牌：STMicroelectronics 备注：这里有STP11NB40多少钱，2025年最近7天走势，今日出价，今日竞价，STP11NB40批发/采购报价，STP11NB40行情走势销售排行榜，STP11NB40报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP11NB40 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.55Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STP11NB40 | N - CHANNEL 400V - 0.48ohm - 10.7A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | |
STP11NB40 | N - CHANNEL 400V - 0.48ohm - 10.7A - TO-220/TO-220FP PowerMESH MOSFET | STMICROELECTRONICS 意法半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 6.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.55Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL 400V - 0.48ohm - 10.7A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per | STMICROELECTRONICS 意法半导体 | | ||
Power MOSFET 文件：1.02456 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.04023 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
STP11NB40产品属性
- 类型
描述
- 型号
STP11NB40
- 功能描述
MOSFET N-Ch 400 Volt 11 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3350 |
原厂直销,现货供应,账期支持! |
|||
ST/意法 |
2450+ |
TO220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
00+ |
TO220/3 |
570 |
原装现货海量库存欢迎咨询 |
|||
ST/意法 |
2402+ |
TO220/3 |
8324 |
原装正品!实单价优! |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
24+ |
N/A |
2500 |
||||
ST/进口原 |
17+ |
TO-220 |
6200 |
||||
ST/意法 |
25+ |
TO220 |
860000 |
明嘉莱只做原装正品现货 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
TO2203 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
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