2ch DC/DC Boost LED Driver

STA801M是10pin排成一列的封装，输出为0.5A×2的开关稳压器｡\nHighSide除开关元件外，还内置了续流二极管，只需很少的元件就能构成两路输出的电源回路｡\n输出：CH1为5V固定､CH2为Vo2Cont端子的设定与检测端子的组合，因此可以设定9V/11.5V/12.1V/15.5V｡\n内置相位补偿回路，与设定的Vo一起完成预调整｡\n具有可输出ON/OFF的软起动功能，同时内置过流保护和过热保护｡

2-Output Separate Excitation Switching Type

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2-Output Separate Excitation Step-down Switching Mode

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封装/外壳：10-SIP 功能：降压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG BUCK 5V/SELECTABLE 10SIP 集成电路（IC） 稳压器 - DC-DC 开关稳压器

封装/外壳：10-SIP 功能：降压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG BUCK 5V/SELECTABLE 10SIP 集成电路（IC） DC DC 开关稳压器

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead