NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

The µPA801T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Mini Mold Package Adopted

NONLINEAR MODEL

文件：19.16 Kbytes Page：2 Pages

isc Silicon NPN RF Transistor

文件：197.86 Kbytes Page：2 Pages

NPN SILICON HIGH FREQUENCY

文件：177.04 Kbytes Page：8 Pages

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The UPA801TF contains two NE856 NPN high frequency silicon bipolar chips. NECs new low profile TF package is ideal for all portable wireless applicatons where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for tw

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

The µPA801T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Mini Mold Package Adopted

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：462.6 Kbytes Page：7 Pages

NONLINEAR MODEL

文件：19.16 Kbytes Page：2 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：RF TRANS 2 NPN 12V 4.5GHZ SOT363 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：托盘 描述：RF TRANS 2 NPN 12V 4.5GHZ SOT363 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN SILICON HIGH FREQUENCY

文件：177.04 Kbytes Page：8 Pages

3/4 STRINGS Xmas LIGHT CONTROL

FEATURES * Adjustable flash rate. * Programmable 2/3/4 strings of bulbs. * UTC 801 sequential mode for about 57 sec. 4 light string flash for about 3 sec. according to normal fosc. then back to sequential again. * UTC 802 sequential mode only. APPLICATION * Xmas light controller, any

T-1 Subminiature Lamps

T-1 Subminiature Lamps T-1 Subminiature Short Type Lamps

Audio Broadcast Quality 800A Series

Features Deep-drawn steel case with tin plated finish, with two convenient 6-32 mounting studs with hardware. Includes wire leads (minimum length of 4). Frequency response +/- 0.5 db max. from 50 Hz. to 15 Khz. Insertion loss of apx. 1 db. Maximum power level +15 dbm. (except 841A, 842A & 84

M8 Plastic Passive I/O Box

文件：196.55 Kbytes Page：3 Pages

Panel Mount for 5x20 mm und 6.3x32 mm Fuses

文件：178.31 Kbytes Page：1 Pages