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型号 功能描述 生产厂家 企业 LOGO 操作
NTE801

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NTE

NTE801

Integrated Circuit FM Stereo Demodulator

Description:\nThe NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers.Features:\nRequires No Inductors\nLow External Part Count\nOnly Oscillator Frequency Adjustment Necessary\nIntegral Stereo/Monaural Switch 75mA Lamp Driving Capability\nWide

NTE

Radial Lead Thermal Cutoff

文件:58.38 Kbytes Page:1 Pages

NTE

Radial Lead Thermal Cutoff

文件:58.38 Kbytes Page:1 Pages

NTE

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NEC

瑞萨

替换型号 功能描述 生产厂家 企业 LOGO 操作

MC13-SERIES

LAMBDA

电盛兰达

Stereo Demodlator

TI

德州仪器

NTE801产品属性

  • 类型

    描述

  • 型号

    NTE801

  • 制造商

    NTE Electronics

  • 功能描述

    DIP-14 FM STEREO DEM

  • 制造商

    NTE Electronics

  • 功能描述

    FM Stereo Demodulator 14-Pin PDIP

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