Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

High voltage bipolar transistors for lighting, SMPS and industrial applications

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 8A TO220AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon Diffused Power Transistor

文件：127.71 Kbytes Page：9 Pages

Series 8 Elevator Socket w/Collet Contacts & Solder Pin Tails

Series 8 Elevator Socket w/Collet Contacts & Solder Pin Tails FEATURES • Ideal for Elevating Devices (Displays, Switches, etc.) to Desired Level with 0.260 to 1.250 [6.60 to 31.75] Height Extension

NPN Silicon Transistor

NPN Silicon Transistor for high voltage, high-speed power switching application

Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 8 A Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch Power Supply

POWER TRANSISTORS(8A,400V,80W)

SWIRCHMODE SERIES NPN POWER TRNASISTOR ... designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for 115 and 220 V switchmode applications such as switching requlators, inverters, DC-DC converter, Motor Controls, Solenoid drive and Deflec