型号 功能描述 生产厂家 企业 LOGO 操作
ST10120C

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Trench MOS Schottky technol

SMCDIODE

桑德斯微电子

ST10120C

封装/外壳:TO-220-3 包装:散装 描述:DIODE ARRAY SCHOTTKY 120V TO220 分立半导体产品 二极管 - 整流器 - 阵列

SMCDIODE

桑德斯微电子

ST10120C

超低正向肖特基二极管

SMC

桑德斯微电子

ST10120C

SCHOTTKY RECTIFIER

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SMC

桑德斯微电子

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100 Tested fo

MACOM

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100 Tested for

MOTOROLA

摩托罗拉

SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS

SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M

MOTOROLA

摩托罗拉

SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS

SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M

MOTOROLA

摩托罗拉

120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime a

ERICSSON

爱立信

更新时间:2026-3-15 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2511
SMD
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST
25+
SMD
16900
原装,请咨询
ARCH
23+
DIP
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
JGD
23+
TO-220F
50000
全新原装正品现货,支持订货
ST
23+
SOP
7000
绝对全新原装!100%保质量特价!请放心订购!
SMC Diode Solutions
22+
TO220AB
9000
原厂渠道,现货配单
ST
26+
SMD
60000
只有原装 可配单
LSI
24+
DIP-16
425
本站库存
ST
20+
SOP-8
2960
诚信交易大量库存现货

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