| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ST10120C | SCHOTTKY RECTIFIER Features 150 C TJ operation Ultralow forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Trench MOS Schottky technol | SMCDIODE 桑德斯微电子 | ||
ST10120C | 封装/外壳:TO-220-3 包装:散装 描述:DIODE ARRAY SCHOTTKY 120V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | SMCDIODE 桑德斯微电子 | ||
ST10120C | 超低正向肖特基二极管 | SMC 桑德斯微电子 | ||
ST10120C | SCHOTTKY RECTIFIER 文件:146.92 Kbytes Page:6 Pages | SMC 桑德斯微电子 | ||
MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100 Tested fo | MACOM | |||
MICROWAVE POWER TRANSISTOR The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100 Tested for | MOTOROLA 摩托罗拉 | |||
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M | MOTOROLA 摩托罗拉 | |||
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M | MOTOROLA 摩托罗拉 | |||
120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime a | ERICSSON 爱立信 |
ST10120C产品属性
- 类型
描述
- Family:
超低正向肖特基二极管
- Package:
TO-220AB
- VRWM(V):
120
- IO (A):
10
- IFSM Max.(A):
120
- IR Max. @VRWM (mA):
0.5
- VF Max. (V):
0.88
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BLOCK |
25+ |
N/A |
550 |
BLOCK电源领域全系列订货 |
|||
MICROCHIP |
24+ |
QFN-28P |
2500 |
||||
Phoenix/菲尼克斯 |
23/24+ |
3031076 |
9832 |
优势特价 原装正品 全产品线技术支持 |
|||
AD |
20+ |
QFP |
500 |
样品可出,优势库存欢迎实单 |
|||
AD |
24+ |
QFP |
5030 |
恒科翔业代理原装现货支持商城下单 |
|||
26+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SMC Diode Solutions |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
AD |
23+ |
QFP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SMC |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
|||
AD |
24+ |
QFP |
5000 |
只做原装公司现货 |
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ST10120C规格书下载地址
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2020-1-11
DdatasheetPDF页码索引
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