N-Channel JFETs

FEATURES
Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz
Very Low Noise: 3 dB (typ) @ 400 MHz
Very Low Distortion
High AC/DC Switch Off-Isolation BENEFITS
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switc

N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER

N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER FEATURES Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A VERY LOWNOISE FIGURE (400 MHz) 4 dB (max) EXCEPTIONAL GAIN (400 MHz) 10 dB (min)

Linear Systems replaces discontinued Siliconix SST4416

文件：286.69 Kbytes Page：1 Pages

丝印代码：H1；N-Channel JFETs

文件：103.9 Kbytes Page：7 Pages

丝印代码：H1；N-Channel JFETs

文件：57.13 Kbytes Page：7 Pages

Linear Systems replaces discontinued Siliconix SST4416

N-Channel JFETs

Wideband, High Gain, Single, N- Channel JFET(SMT)

N-Channel JFETS

文件：30.47 Kbytes Page：2 Pages

N-Channel high frequency JFET amplifier

文件：286.69 Kbytes Page：1 Pages

Linear Systems replaces discontinued Siliconix SST4416A

文件：286.74 Kbytes Page：1 Pages

N-Channel high frequency JFET amplifier

文件：286.74 Kbytes Page：1 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：JFET N-CH 36V 5MA SOT-23 分立半导体产品 晶体管 - JFET

N-Channel JFETs

文件：57.13 Kbytes Page：7 Pages

N-Channel JFETs

文件：57.13 Kbytes Page：7 Pages

N-Channel JFETs

文件：57.13 Kbytes Page：7 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：JFET N-CH 36V 5MA SOT-23 分立半导体产品 晶体管 - JFET

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor control ■ Lithium-ion battery applications ■ Note