SFET RF,VHF, UHF, Amplitiers

N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50.

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

N-Channel JFET High Frequency Amplifier

FEATURES • Low Noise • Low Feedback Capacitance • Low Output Capacitance • High Transconductance • High Power Gain

High Frequency Amplifier

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Linear Systems replaces discontinued Siliconix PN4416

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR） 描述：JFET N-CH 30V TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

JFET

Linear Systems replaces discontinued Siliconix PN4416A

The PN4416A is a N-Channel high frequency JFET amplifier Linear Systems replaces discontinued Siliconix PN4416A The PN4416A N-channel JFET is designed to provide high-performance amplification at high frequencies. The hermetically sealed TO-72 package is well suited for military applications. T

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

a N-Channel high frequency JFET amplifier

The PN4416A is a N-Channel high frequency JFET amplifier Linear Systems replaces discontinued Siliconix PN4416A The PN4416A N-channel JFET is designed to provide high-performance amplification at high frequencies. The hermetically sealed TO-72 package is well suited for military applications. T

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：托盘 描述：JFET N-CH 30V TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

JFET N-CH 30V TO92

a N-Channel high frequency JFET amplifier

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Mixers

N-Channel Enhancement Mode MOSFET

Features • 30V/4A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

Thick Film Surface Mounted Wide Body Tape and reel packaging standard

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Networks

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Networks

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Lower Gate Charge, Simple Drive Requirement

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