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型号 功能描述 生产厂家 企业 LOGO 操作
PN4416A

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

PHILIPS

飞利浦

PN4416A

Linear Systems replaces discontinued Siliconix PN4416A

The PN4416A is a N-Channel high frequency JFET amplifier Linear Systems replaces discontinued Siliconix PN4416A The PN4416A N-channel JFET is designed to provide high-performance amplification at high frequencies. The hermetically sealed TO-72 package is well suited for military applications. T

MICROSS

PN4416A

Mixers

INTERFET

a N-Channel high frequency JFET amplifier

The PN4416A is a N-Channel high frequency JFET amplifier Linear Systems replaces discontinued Siliconix PN4416A The PN4416A N-channel JFET is designed to provide high-performance amplification at high frequencies. The hermetically sealed TO-72 package is well suited for military applications. T

MICROSS

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

PHILIPS

飞利浦

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

PHILIPS

飞利浦

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

PHILIPS

飞利浦

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor control ■ Lithium-ion battery applications ■ Note

PHILIPS

飞利浦

PN4416A产品属性

  • 类型

    描述

  • BVgss (min) V:

    -35

  • Vgso (min) V:

    -2.50

  • Vgso (max) V:

    -6.00

  • Idss (min) mA:

    5.00

  • Idss (max) mA:

    15.00

  • Gm (min) mS:

    4.50

  • ēn (typ) ɳV√Hz:

    4.00

  • Ciss (max) pF:

    4.00

  • TYPE:

    N-CH

  • CONFIG:

    SINGLE

  • ORDERING:

    Direct

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