N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Features ■Lowon-stateresistance ■Fastswitching ■TrenchMOS™technology. Applications ■DCtoDCconvertors ■DCmotorcontrol ■Lithium-ionbatteryapplications ■Note

SingleN-ChannelMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thisdeviceiswellsuitedforlowvoltageandbattery

N-Channel30-V(D-S)MOSFET

FEATURES ●TrenchFETPowerMOSFET

R-CThermalModelParameters

DESCRIPTION TheparametricvaluesintheR-Cthermalmodelhavebeenderivedusingcurve-fittingtechniques.ThesetechniquesaredescribedinASimpleMethodofGeneratingThermalModelsforaPowerMOSFET[1].WhenimplementedinP-Spice,thesevalueshavematchingcharacteristiccurvestotheS

N-Channel30-V(D-S)MOSFET

FEATURES ●TrenchFETPowerMOSFET

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

N-ChannelEnhancementModeMOSFET

Features •30V/4A, RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=22mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems

ThickFilmSurfaceMountedWideBodyTapeandreelpackagingstandard

文件：235.57 Kbytes Page：2 Pages

Networks

文件：63.6 Kbytes Page：1 Pages

Networks

文件：29.03 Kbytes Page：2 Pages

LowerGateCharge,SimpleDriveRequirement

文件：65.379 Kbytes Page：4 Pages