N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor control ■ Lithium-ion battery applications ■ Note

Single N-Channel MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery

N-Channel 30-V (D-S) MOSFET

FEATURES ● TrenchFET Power MOSFET

R-C Thermal Model Parameters

DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in A Simple Method of Generating Thermal Models for a Power MOSFET[1]. When implemented in P-Spice, these values have matching characteristic curves to the S

N-Channel 30-V (D-S) MOSFET

FEATURES ● TrenchFET Power MOSFET

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

N-Channel Enhancement Mode MOSFET

Features • 30V/4A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

Thick Film Surface Mounted Wide Body Tape and reel packaging standard

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Networks

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Networks

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Lower Gate Charge, Simple Drive Requirement

文件：65.379 Kbytes Page：4 Pages